publication order number: bf421/d ? semiconductor components industries, llc, 2004 october, 2004 ? rev. 3 1 bf421, bf423 high voltage transistors pnp silicon maximum ratings rating symbol bf421 bf423 unit collector ?emitter voltage v ceo ?300 ?250 vdc collector ?base voltage v cbo ?300 ?250 vdc emitter ?base voltage v ebo ?5.0 vdc collector current ? continuous i c ?50 madc collector current ? peak i cm 100 ma total device dissipation (note 1) @ t a = 25 c derate above 25 c p d 830 6.6 mw mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 150 c/w thermal resistance, junction to lead r jl 68 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. mounted on a fr4 board with 200 mm 2 of 1 oz copper and lead length of 5 mm. http://onsemi.com marking diagram x = 1 or 3 a = assembly location y = year ww = work week to?92 (to?226aa) case 29?11, style 14 1 2 3 collector 2 3 base 1 emitter bf 42x ayww device package shipping ordering information bf421zl1 to?92 2000 ammo pack bf423 to?92 5000 units/box BF423ZL1 to?92 2000 ammo pack
bf421, bf423 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 2) (i c = ?1.0 madc, i b = 0) bf421 bf423 v (br)ceo ?300 ?250 e e vdc collector ?base breakdown voltage (i c = ?100 adc, i e = 0) bf421 bf423 v (br)cbo ?300 ?250 e e vdc emitter ?base breakdown voltage (i e = ?100 adc, i c = 0) bf421 bf423 v (br)ebo ?5.0 ?5.0 e e vdc collector cutoff current (v cb = ?200 vdc, i e = 0) bf421 bf423 i cbo e e ?0.01 e adc emitter cutoff current (v eb = ?5.0 vdc, i c = 0) bf421 bf423 i ebo e e ?100 e nadc on characteristics dc current gain (i c = ?25 ma, v ce = ?20 vdc) bf421 bf423 h fe 50 50 e e e collector ?emitter saturation voltage (i c = ?20 madc, i b = ?2.0 madc) v ce(sat) e ?0.5 vdc base ?emitter saturation voltage (i c = ?20 ma, i b = ?2.0 ma) v be(sat) e ?2.0 vdc small?signal characteristics current ?gain e bandwidth product (i c = ?10 madc, v ce = ?10 vdc, f = 20 mhz) f t 60 e mhz common emitter feedback capacitance (v cb = ?30 vdc, i e = 0, f = 1.0 mhz) c re e 2.8 pf 2. pulse test: pulse width 300 s; duty cycle 2.0%.
bf421, bf423 http://onsemi.com 3 figure 1. dc current gain figure 2. capacitance i c , collector current (ma) 150 90 70 50 30 10 t j = 25 c v ce = 20 vdc f = 20 mhz f, current-gain bandwidth (mhz) t 1 figure 3. current?gain e bandwidth 130 21 c, capacitance (pf) v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c ib @ 1mhz 100 1.0 c cb @ 1mhz i c , collector current (ma) v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 110 3579 19 17 15 13 11 v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ -55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ -55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ -55 c, v ce = 10 v figure 4. oono voltages i c , collector current (ma) 300 0.1 1.0 10 250 200 150 0 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 50 100
bf421, bf423 http://onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. style 14: pin 1. emitter 2. collector 3. base r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 to?92 (to?226) case 029?11 issue aj on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bf421/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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